Publications

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2013

1	F. Arciprete, E. Placidi, R. Magri, M. Fanfoni, A. Balzarotti and F. Patella The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs ACS Nano, (in press)

2	L. Persichetti, A. Sgarlata, M. Fanfoni, A. Balzarotti Size-dependent reversal of the elastic interaction energy between misfit nanostructures Journal of Physics: Condensed Matter, 25, 075802 (2013). Cover page vol. 25 Issue 7

3	A. Sgarlata, L. Persichetti and A.Balzarotti: K. Wandelt (ed.) Semiconductor quantum dots: Model case Ge/Si Surface and Interface Science Wiley-VCH, (in press).

4	L. Persichetti, A. Sgarlata, M. Fanfoni, A. Balzarotti Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy Thin Solid Films, (in press).

2012

1	L. Persichetti, A. Sgarlata, G. Mattoni, M. Fanfoni, A. Balzarotti Orientational phase diagram of the epitaxially strained Si(001): Evidence of a singular (105) face Phys. Rev. B, 85 195314 (2012) .

2

E. Placidi, F. Arciprete, R. Magri, M. Rosini, A. Vinattieri, L. Cavigli, M. Gurioli, E. Giovine, L. Persichetti, M. Fanfoni, F. Patella and A. Balzarotti; S. Bellucci (ed.)
InAs epitaxy on GaAs(001): a model case of strain-driven self-assembling of quantum dots
Self-assembly of Nanostrucures, The INFN Lectures-Vol III/, Berlin Heidelberg: Springer Verlag,
Lecture Notes in Nanoscale Science and Technology, 12 73-125 (2012).

3

L. Persichetti, A. Capasso, A. Sgarlata, M. Fanfoni, N. Motta and A. Balzarotti: S. Bellucci (ed.)
Towards a controlled growth of self-assembled nanostructures: shaping, ordering and localization in Ge/Si heteroepitaxy
Self-assembly of Nanostrucures, The INFN Lectures-Vol III/, Berlin Heidelberg: Springer Verlag, Lecture Notes in Nanoscale Science and Technology. 12 201-263 (2012).

4	M. Fanfoni, L. Persichetti, M. Tomellini Order and randomness in Kolmogorov-Johnson-Mehl-Avrami-type phase Journal of Physics: Condensed Matter, 24, 355002 (2012).

5	E. Placidi, F. Arciprete, A. Balzarooti and F. Patella GaAs an GaMnAs quantum rings grown by droplet epitaxy Applied Physics Letters, 101, 141901 (2012).
6	F. Valentini, L. Persichetti, A. Sgarlata, M. Fanfoni, G. Palleschi and A. Balzarotti Morphological and electronic characterization of functionalized graphene-nanoribbons obtained by the unzipping of single-wall carbon nanotubes: a scanning tunneling microscopy study Fullurenes, nanotubes and carbon nanostructures, 21 302.

7	M. Fanfoni, F. Arciprete, C. Tirabassi, D. Del Gaudio, A. Balzarotti, F. Patella and E. Placidi Coarsening effect on island-size scaling: The model case InAs/GaAs(001) Phys. Rev. E, 86 061605 (2012)

8	M. Fanfoni, F. Patella, M. Tomellini, F. Arciprete I fenomeni fisici e chimici irreversibili: la diffusione Lettera matematica PRISTEM, 83 34 (2012)

2011

1	L. Persichetti, A. Sgarlata, M. Fanfoni and A. Balzarotti Breaking elastic field symmetry with substrate vicinality Phys. Rev. Letters, 106 055503 (2011). Published on Virtual J. of Nanoscale Science and Technology vol. 23, issue 6

2	L. Persichetti, A. Sgarlata, M. Fanfoni and A. Balzarotti Ge growth on vicinal Si(001) surfaces: island's shape and pair interaction vs miscut angle Journal of Nanoscience and Nanotechnology, 11 9185 (2011).

3	L. Persichetti, A. Capasso, S. Ruffell, A. Sgarlata, M. Fanfoni, N. Motta and A. Balzarotti Ordering of Ge islands on Si(001) substrates patterned by nanoindentation. Thin Solid Films 519, 4207 (2011).

4	L. Herrera Diez, M. Konuma, J. Honolka, K. Kern, E. Placidi, F. Arciprete, A.W. Rush-forth, R.P. Campion, and B.L. Gallagher Magnetism and carrier modulation in (Ga,Mn)As/organic-dye hybrid devices Appl. Phys. Lett. 98, 022503 (2011).

5	E. Placidi, E. Zallo, F. Arciprete, F. Patella, A. Balzarotti Comparative study of low temperature growth of InAs and InMnAs quantum dots Nanotechnology 22, 195602 (2011).

6	L. Herrera Diez, M. Konuma, R. K. Kremer, J. Honolka, K. Kern, E. Placidi and F. Arciprete Magneto-electronic properties of oxygenated (Ga,Mn)As Phys. Rev. B 83, 094420 (2011).

7	A. Sgarlata, L. Persichetti, A. Capasso, M. Fanfoni, N. Motta and A. Balzarotti Driving Ge island ordering on nanostructured Si surfaces Nanoscience and Nanotechnology Letters 3, 841 (2011).

8	S. Colonna, E. Placidi, F. Ronci, A. Cricenti, F. Arciprete, and A. Balzarotti The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface Journal of Applied Physics 109, 1123522 (2011).

9

L. Persichetti, F. Tombolini, S. Casciardi, M. Diociaiuti, M. Fanfoni, G. Palleschi, A. Sgarlata, F. Valentini and A. Balzarotti
Folding and stacking defects of graphene flakes probed by electron nanobeam
Applied Physics Letters 99, 041904 (2011).
Published on Virtual J. of Nanoscale Science and Technology vol. 24, issue 6

10	L.Persichetti, R. Menditto, A.Sgarlata, M.Fanfoni and A.Balzarotti Hug-like island growth of Ge on strained vicinal Si(111) surfaces Applied Physics Letters 99, 161907 (2011). Published on Virtual J. of Nanoscale Science and Technology vol. 24, issue 18

11	A. Cricenti, S. Colonna, E. Placidi, M. Luce, J. Qi, N. H. Tolk, G. Margaritondo Optical techniques for pump-probe magnetic measurements and nanoimaging of biological samples Rend. Fis. Acc. Lincei 22, S49 (2011)

2010

1	L.Persichetti, A.Sgarlata, M.Fanfoni and A.Balzarotti Shaping Ge islands on Si(001) surfaces with misorientation angle Phys. Rev. Letters, 104, 036104 (2010). Published on Virtual J. of Nanoscale Science and Technology vol. 24, issue 6.

2	L.Persichetti, A.Sgarlata, M.Fanfoni and A.Balzarotti Pair interaction between Ge islands on vicinal Si(001) surfaces. Phys. Rev. B, 81, 113409 (2010).

3	F. Arciprete, E. Placidi, M. Fanfoni, F. Patella, A. Della Pia and A. Balzarotti Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001). Phys. Rev. B, 81, 165306 (2010). Published on Virtual J. of Nanoscale Science and Technology vol. 21, issue 16.

4	L. Herrera Diez, J. Honolka, K. Kern, K. Kronmuller, F. Arciprete, E. Placidi, A.W. Rush-fort, R.P. Campion, and B.L. Gallagher Magnetic aftereffect in GaMnAs. Phys. Rev. B, 81, 094412 (2010).

5	L.Persichetti, A.Sgarlata, M.Fanfoni and A.Balzarotti Ripple-to-dome transition: The growth evolution of Ge on vicinal Si(1 1 10) surface. Phys. Rev. B, 82, 121309(R) (2010). Published on Virtual J. of Nanoscale Science and Technology vol. 22, issue 15.

6	J. Honolka, L. Herrera Diez, R.K. Kremer, K. Kern, F. Arciprete, E. Placidi Temperature dependent Néel wall dynamics in GaMnAs/GaAs. New J. Phys. 12, 093022 (2010).

7	I. Hamley, G. Brown, V. Castelletto, G. Cheng, M. Venanzi, M. Caruso, E. Placidi, C. A-leman, G. Revilla-López, D. Zanuy Self-Assembly of a Designed Amyloid Peptide Contain-ing the Functional Thienylalanine Unit Journal of Physical Chemistry B 114, 10674-10683 (2010).

2009

1	E. Placidi, A. Dalla Pia, F. Arciprete Annealing effects on faceting of InAs/GaAs(001) quantum dots Appl. Phys. Lett. 94, 021901 (2009). Published onVirtual Journal of Nanoscale Science & Technology Volume 19, Issue 4
2	S. D. Thorpe, F. Arciprete, E. Placidi, F. Patella, M. Fanfoni, A. Balzarotti, S. Colonna, F. Ronci, A. Cricenti, A. Verdini, L. Floreano, A. Morgante XPS study of Mn incorporation on the GaAs (001) surface Superlattices and Microstructures 46, 258, (2009).
3	Bernardi M., Sgarlata A., Fanfoni M., Persichetti L., and Balzarotti A. Self-assembly of Ge dots on Silicon: an example of controlled nano manufacturing Superlattices and Microstructures 46, 318 (2009).
4	L.Persichetti, A.Sgarlata, M.Fanfoni, M.Bernardi and A.Balzarotti Step-step interaction on vicinal Si(001) surfaces studied by scanning tunnelling microscopy Phys. Rev. B 80, 075315 (2009). Published on Virtual J. of Nanoscale Science and Technology vol. 20, issue 10.
5	Arciprete F., Placidi E., Patella F., Fanfoni M., Balzarotti A., Vinattieri A., Cavigli L., Abbarchi M., Gurioli M.,Lunghi L., and Gerardino A. Selective growth of InAs quantum dots on SiO₂-masked GaAs J. of Nanophotonics 3. 031995 (2009).
6	L.Persichetti, A.Sgarlata, M.Fanfoni and A.Balzarotti Formation and Localization of GeSi Quantum Dots on vicinal surfaces: a Scanning Tunneling Microscopy Characterization 26th European Conference on Surface Science (ECOSS-26) Aug 30- Sept 9 2009, Parma, Italy (Oral)
7	F. Arciprete, F. Patella, E. Placidi, M. Fanfoni, A. Balzarotti, A. Vinatteri and A. Gerardino Nanoscale Selective Growth of InAs Quantum Dots on GaAs(001): A Bottom-up Approach MRS fall meeting 2009, 30^th November – 3^rd December, Boston, USA (Oral).
8	E. Placidi, Single quantum dot emission by nanoscale selective growth of InAs on GaAs: a bottom-up ap-proach: Collaborative Conference on Interacting Nanostructures (CCIN), 2009 9-13 November, San Diego, USA (Invited Oral)

2008

1	Placidi E., Arciprete F., Fanfoni M, Patella F., Orsini E., and Balzarotti A. The InAs/GaAs(001) quantum dots transition: Advances on understanding In “Self-Assembled Quantum Dots”, Springer New Series: Lecture Notes on Nanoscale Science & Technology", Zhiming M.Wang Ed. vol 1, p.1-24. (2008)
2	Bute O.,Cimpoca Gh.V., Placidi E., Arciprete F., Patella F., Fanfoni M., Balzarotti A. The monitoring of 2D-3D transition for InAs/GaAs(001)self-assembled quantum dots by atomic force microscopy J. of Optoelectronic and Advanced Materials 10, 74-79 (2008).
3	Bernardi M., Sgarlata A., Fanfoni M.,Balzarotti A., Motta N. A study of the pair distribution function of self-organized Ge quantum dots Appl. Phys. Lett. 93, 031917 (2008). Published on Virtual J. of Nanoscale Science and Technology vol. 18, issue 6.
4	Adalberto Balzarotti Evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy Nanotechnology 19, 505701 (2008).
5	Patella F., Arciprete F., Placidi E., Fanfoni M., Balzarotti A., Vinattieri A., Cavigli L., Abbarchi M., Gurioli M., Lunghi L., Gerardino A. Single quantum dots emission by nanoscale selective growth of InAs on GaAs: a bottom-up approach Appl. Phys. Lett. 93, 231904 (2008) . Published on Virtual Journal of Nanoscale Science & Technology Volume 18, Issue 25
6	Bernardi M., Sgarlata A., Notta, N.,Del Moro D.,Fanfoni M, and Balzarotti A. Ordering of Ge Quantum Dots on Silicon surfaces via bottom-up and top-down approaches Proc.Int.Conf. on Nanoscience and Nanotechnology (ICONN 2008), Brisbane, Australia
7	L. Herrera Diez, R.K. Kremer, J. Honolka, K. Kern, A. Enders, M. Rössle, E. Arac, E. Placidi and F. Arciprete Complex domain wall dynamics in compressively strained Ga1-x MnxAs epilayers Phys. Rev. B 78, 155310 (2008).
8	E. Placidi The InAs/GaAs(001) quantum dots transition: advances on understanding, Facets of Heteroepi-taxy: Theory, Experiment, and Computation, 2008, 10-15 February, Banff, Canada (Invited Oral)

2007

1	E. Placidi, F. Arciprete, F. Patella, M. Fanfoni, E. Orsini and A. Balzarotti, Kinetic effects in the InAs/GaAs(001) two-dimensional to three-dimensional transition Journal of Physics: Condensed Matter 19, 225006 (21 pages) (2007)
2	P. D. Szkutnik, A. Sgarlata, E. Placidi, N. Motta, I. Berbezier and A. Balzarotti, Influence of patterned silicon and silica surfaces on the nucleation of Ge nanostructures Surf. Sci. 601, 2778-2782 (2007).
3	M. Fanfoni, E. Placidi, F. Arciprete, E. Orsini, F. Patella, A. Balzarotti, Sudden nucleation versus scale invariance of InAs quantum dots on GaAs Phys. Rev. B 75, 245312 (2007) Published on Virtual J. of Nanoscale Science and Technology vol 15, issue 24 (18 June 2007).
4	E. Placidi, F. Arciprete, M. Fanfoni, F. Patella, and A. Balzarotti, The InAs/GaAs(001) quantum dots transition: advances on understanding Lecture Notes on Nanoscale Science and Technology: “Self-Assembled Quantum Dots”, page 1-25 (2007)
5	P.D. Szkutnik, A. Sgarlata, A. Balzarotti, N. Motta, A. Ronda, I. Berbezier Early stage of Ge growth on Si(001) vicinal surfaces with an 8° miscut along [110] Physical Review B 75 033305
6	Nunzio Motta, Federico Boscherini, Anna Sgarlata, Adalberto Balzarotti, Giovanni Capellini, Fulvio Ratto, and Federico Rosei GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study Physical Review B 75 035337
7	Adalberto Balzarotti Ge nucleation on patterned and unpatterned Si surfaces in "Highlights on Spectroscopies of Semiconductors and Insulators", Vol 94, pag.255, Ed. by G.Guizzetti, L.C.Andreani, F. Marabelli, M.Patrini, SIF Bologna (2007).

2006

1	F.Patella, F.Arciprete, M.Fanfoni, A.Balzarotti and E. Placidi, Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) Appl. Phys. Lett. 88, 161903 (2006)
2	E. Placidi, C. Hogan, F. Arciprete, M. Fanfoni, F. Patella, R. Del Sole, and A Balzarotti, Adsorption of molecular oxygen on GaAs(001) studied using high resolution electron energy loss study Phys. Rev. B 73, 205345 (2006)
3	F. Arciprete, E. Placidi, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti, How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001). Appl. Phys. Lett. 89 041904 (2006)
4	O.E. Tereshchenko, D. Paget, P. Chiaradia, E. Placidi, J.E. Bonnet, F. Wiame, and A. Taleb-Ibrahimi, Chemically prepared well-ordered InP(001) surfaces Surf. Sci. 600, 3160-3166 (2006)
5	N. Motta, P.D. Szkutnik, M. Tomellini, A. Sgarlata, M. Fanfoni, F. Patella, A. Balzarotti Role of patterning in islands nucleation on semiconductor surfaces Comptes Rendus Physique 7 (9-10): 1046-1072 (2006)
6	I. Berbezier, A. Karmous, P.D. Szkutnik, A. Ronda, A. Sgarlata, A. Balzarotti, P. Castrucci, M. Scarselli, M. De Crescenzi Formation and ordering of Ge nanocrystals on SiO₂ using FIB nanolithography Materials Science in Semiconductor Processing 9, 812-16 (2006)
7	I. Berbezier, A. Karmous, A. Ronda, A. Sgarlata, A. Balzarotti, P. Castrucci, M. Scarselli, M. De Crescenzi Growth of ultrahigh-density quantum-confined germanium dots on SiO₂ thin films Appl. Phys. Lett. 89, 063122 (2006)
8	M Fanfoni, M Tomellini Mean field approach for describing thin film morphology. J. Phys.: Condens. Matter 18 4219-4230
8	M Fanfoni, M Tomellini, B Marchetti and F. Gonnella Mean field approach for describing thin film morphology: 2. Adatom life time J. Phys.: Condens. Matter 18 8093-8102
9	E. Placidi, F. Arciprete, V, Sessi, M. Fanfoni, E. Orsini, F. Patella and A. Balzarotti Surface Diffusion and Scaling Behavior in the nucleation and growth of InAs Quantum Dots on GaAs(001) MRS fall meeting 2006, 28th November - 27th November-1st December, Boston, USA (Oral)

2005

1	C. Hogan, E. Placidi and R. Del Sole Geometric structure and optical properties of the GaAs(001)-c(4×4) surface, Phys. Rev. B 71, 041308(R) (2005).
2	I. Aureli, V. Corradini, C. Mariani, E. Placidi, F. Arciprete, A.Balzarotti Valence band and In-4d core level study of de-capped and ion-bombarded-annealed In-terminated InAs(001) surfaces, Surf. Sci 576, 123 (2005).
3	E. Placidi, F. Arciprete, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti, Step erosion during InAs quantum dots on GaAs(001) surface, Appl. Phys. Lett. 86, 241913, (2005). Cover page for Issue 24
4	F.Patella, F.Arciprete, M.Fanfoni, V. Sessi, A.Balzarotti and E. Placidi, Reflection high electron energy diffraction observation of surface mass transport at the two- to three- dimensional growth transition of InAs on GaAs(001), Appl. Phys. Lett. 87, 252101 (2005).
5	B. Pacchiarotti, M. Fanfoni and M. Tomellini, Roughness in the Kolmogorov–Johnson–Mehl–Avrami framework: extension to (2+1)D of the Trofimov–Park model Physica A, 358 379 (2005)
6	M. Tomellini, M. Fanfoni Film growth viewed as stochastic process of dots Journal of Physics: Condensed Matter 17 (2005) R571
7	M. Tomellini, M. Fanfoni Kinetics of island density in thin film growth in the framework of statistical mechanics of rigid disks Phys. Rev. B 72, 155407 (2005)
8	F. Ratto, F. Rosei, S. Cherifi, A. Locatelli, S. Fontana, S. Heun, P.D. Szkutnik, A. Sgarlata, N. Motta, M. De Crescenzi Composition of single Ge(Si) islands in the growth of Ge on Si(111) by X–Ray spectromicroscopy J. Appl. Phys. 97, 043516 (2005).
9	E. Placidi, F. Arciprete, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti, Dynamic scaling and microscopic mechanisms during growth mode transition of the InAs/GaAs(001) heterostructure, 23rd European Conference on Surface Science (ECOSS-23) 4. - 9. Sept. 2005, Berlin, Germany (Oral)
10	E. Placidi, F. Arciprete, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti, Dynamic scaling and microscopic mechanisms during growth mode transition of the InAs/GaAs(001) heterostructure, Villa Mondragone, Università di Roma "Tor Vergata"3 - 5 October 2005, Rome Italy (Invited Oral)
11	F. Arciprete, E. Placidi, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti, The Two- to Three-Dimensional Transition in InAs/GaAs(001) Heterostructure: The Role of Kinetics MRS fall meeting 2005, 28^th November – 2^nd December, Boston, USA (Invited Oral).
12	E. Placidi, F. Arciprete, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti, Step erosion during nucleation of InAs/GaAs(001) quantum dots, MRS fall meeting 2005, 28^th November – 2^nd December, Boston, USA (Oral).
13	A. Sgarlata, P.D. Szkutnik, A. Balzarotti, N. Motta Growth and Ordering of Ge quantum dots on natural and patterned Si surfaces: a real time study by STM Litography and FIB. A real-time study by Scanning Tunneling Microscopy Proceeding of IVC-16 (16th International Vacuum Congress ), ICSS-12 (12th International Conference on Solid Surfaces), NANO8 (8thInternational Conference on Nanometer-Scale Science and Technology) AIV-17 (17th Vacuum National Symposium), June 28 July 2, Cinema Festival Palace Venice 2004
14	E. Placidi, F. Arciprete, V, Sessi, M. Fanfoni, F. Patella and A. Balzarotti Dynamic scaling and microscopic mechanisms during growth mode transition of the InAs/GaAs(001) heterostructure Nanocose meeting,Villa Mondragone, Università di Roma "Tor Vergata"3 - 5 October 2005, Rome Italy (Invited Oral)
15	E. Placidi, F. Arciprete, V, Sessi, M. Fanfoni, F. Patella and A. Balzarotti Step erosion during nucleation of InAs/GaAs(001) quantum dots MRS fall meeting 2005, 28th November -- 2nd December, Boston, USA (Oral)

2004

1	O.E. Tereshchenko, E. Placidi, P. Chiaradia, A. Balzarotti, and D. Paget Structure of chemically prepared InAs(100) surface Surf. Sci. 570, 237 (2004).
2	F. Arciprete, C. Goletti, E. Placidi, C. Hogan, P. Chiaradia, M. Fanfoni, F. Patella, and A. Balzarotti Surface states at the GaAs(001)2 x 4 surface Phys. Rev. B 69, 081308 (2004)
3	F. Patella, A. Sgarlata, F. Arciprete, S. Nufris, P. Skutznik, E. Placidi, M. Fanfoni, N. Motta and A. Balzarotti Self-assembly of InAs and Si/Ge quantum dots on structured surface J. Phys. Cond. Matt 16 S1503-S1534 (2004).(invited review paper)
4	P. D. Szkutnik, A. Sgarlata, S. Nufris, N. Motta, and A. Balzarotti Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces Phys. Rev. B 69, 201309(R) (2004)
5	M. Scarselli, P. Castrucci, P. D. Szkutnik, A. Sgarlata and M. De Crescenzi STM study of Si(1 1 1)7 × 7 reconstructed surface carbonization induced by acetylene Surf. Sci., Vol. 559 (2004) 223
6	C. A. Pignedoli, A. Catellani, P. Castrucci, A. Sgarlata, M. Scarselli, M. De Crescenzi, and C. M. Bertoni Carbon induced restructuring of the Si(111) surface Phys. Rev. B 69, 113313 (2004)
7	F. Ratto, F. Rosei, A. Locatelli, S. Cherifi, S. Fontana, S. Heun, P.D. Szkutnik, A. Sgarlata, M. De Crescenzi, and N. Motta Composition of Ge(Si) islands in the growth of Ge on Si(111) Appl. Phys. Lett. 84, 4526 (2004)
8	M. Tomellini, M. Fanfoni Eliminating overgrowth effects in Kolmogorov-Johnson-Mehl-Avrami model through the correlation among actual nuclei Physica A: Statistical Mechanics and its Applications, v 333, n 1-4, Feb 15, 2004, p 65-70
9	M. Fanfoni and M. Tomellini Modeling adatom life time in thin film growth in case of spatially correlated nuclei Surf. Sci., Vol. 566-568 (2004), 1147
10	A. Balzarotti, M. Cini, E. Perfetto, G. Stefanucci W=0 pairing in Hubbard and related models of low-dimensional superconductors J. Phys .:Condens. Matter 16, R1387-R1422 (2004), (invited review paper)
11	H. Guyot, N. Motta, E. Placidi and H. Balaska Characterization of cleaved surfaces of a monophosphate tungsten bronze Rev. Adv. Mater. Sci. 8 (2004) 1-10

2003

1	F.Arciprete, C. Goletti, E. Placidi, M.Fanfoni, F.Patella, P. Chiaradia, C. Hogan and A. Balzarotti Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4 x 4) surface Physical Review B, 68 125328 (2003).
2	F. Patella, S. Nufris, F. Arciprete, M. Fanfoni, E. Placidi, A. Sgarlata, and A. Balzarotti Tracing the two-to-three dimensional transition in the InAs/GaAs(001) heteroepitaxial growth Physical Review B, 67 205308 (2003).
3	A. Balzarotti, E. Placidi, F. Arciprete, M. Fanfoni, F. Patella Anisotropy of the GaAs(001)-β2(2×4) surface from high-resolution electron-energy-loss spectroscopy Physical Review B, 67 115332 (2003).
4	F. Patella, S. Nufris, F.Arciprete, M. Fanfoni, E. Placidi, A. Sgarlata, and A. Balzarotti Structural Study of the InAs Quantum-Dot Nucleation on GaAs(001) Microelectronics Journal 34, 419 (2003)
5	A. Balzarotti, M. Fanfoni, F. Patella, F. Arciprete, E. Placidi, G. Onida, R. Del Sole The GaAs(001) c(4×4) surface: A New Perspective from Energy Loss Spectra Surf. Sci. Lett. 524, L71 (2003).
6	A. Balzarotti, M. Fanfoni,F. Patella, F. Arciprete, and E. Placidi Electronic anisotropy of the GaAs(001) surface studied by the energy loss spectroscopy Microelectronics Journal 34, 595 (2003)
7	F. d’Acapito, S. Colonna, F. Arciprete, A. Balzarotti, I. Davoli, F. Patella, S. Mobilio In_xGa_(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS) Nuclear Instruments and Methods in Physics Research B 200 (2003) 85.
8	A. Sgarlata, P. D. Szkutnik, A. Balzarotti, N. Motta, and F. Rosei Self-ordering of Ge islands on step-bunched Si(111) surfaces Appl. Phys. Lett. 83, 4002 (2003)
9	P. D. Szkutnik, A. Sgarlata, N. Motta and A. Balzarotti Real-time studies of Ge growth on nanostructured Si substrates Mat. Sci. and Eng. C, Vol. 23, (2003) 1053
10	N. Motta, A. Sgarlata, F. Rosei, P. D. Szkutnik, S. Nufris, M. Scarselli and A. Balzarotti Controlling the quantum dot nucleation site Mat. Sci. and Eng. B, Vol. 101 (2003) 77
11	M. Scarselli, L. Dragone, A. Sgarlata, M. Fanfoni, V. Di Castro and R. Zanoni Mn/Pt(1 1 1) interface investigated at the first stages of formation via AES and STM Surf. Sci., Vol. 545 (2003) L774
12	P. Castrucci, A. Sgarlata, M. Scarselli and M. De Crescenzi STM study of acetylene reaction with Si(1 1 1): observation of a carbon-induced Si(1 1 1)square root = radical sign3×square root = radical sign3R30° reconstruction Surf. Sci., Vol. 531 (2003) L329
13	M.Fanfoni, M.Tomellini Beyond the Kolmogorov Johnson Mehl Avrami kinetics:inclusion of the spatial correlation Eur. Phy. J. B 34 (2003) 331

2002

1	F. Arciprete, F. Patella, M. Fanfoni, S. Nufris, E. Placidi, D. Schiumarini, and A. Balzarotti Morphology of Self-Assembled InAs Quantum Dots on GaAs(001)" Mat. Res. Soc. Symp. Proc. Vol. 696 (2002).
2	F. Patella, F. Arciprete, E. Placidi, S. Nufris, M. Fanfoni, A.Sgarlata, D. Schiumarini, and A. Balzarotti Morphological instabilities of the GaAs(001) surface and their effect on the self-assembling of InAs quantum-dot arrays Appl. Phys Lett. 81 2273 (2002).
3	S. Colonna, F. Arciprete, M. Fanfoni, A. Balzarotti, M. De Crescenzi, S. Mobilio In situ X-ray absorption measurements of the Cu/MgO(001) interface Surf. Sci., Vol. 512, (2002) L341
4	N. Motta, A. Sgarlata, A. Balzarotti, F. Rosei Self assembling and ordering of Ge/Si quantum dots on flat and nanostructured surfaces Mat. Res. Soc. Symp. Boston , Vol.696, N2.2.1, (2002).
5	M Tomellini, M Fanfoni, M. Volpe Phase transition kinetics in the case of nonrandom nucleation Phys. Rev. B, Vol. 65 (2002), 140301(R).
6	M Fanfoni, M Tomellini, M. Volpe Treatment of phantom overgrowth in the Kolmogorov-Johnson-Mehl-Avrami kinetics as a correlation problem Phys. Rev. B, Vol. 65 (2002).
7	N. Motta, A. Sgarlata, A. Balzarotti and F. Rosei Self assembling and ordering of Ge/Si quantum dots on Flat and Nanostructured Surfaces Mat. Res. Soc. Symp. Vol 696 (2002).
8	F. Arciprete, C. Goletti, S. Almaviva, and P. Chiaradia Optical anisotropy of oxidized InAs(001) surfaces Surface Science 515 (2002) 281-286.
9	C. Goletti, G. Bussetti, F. Arciprete, P. Chiaradia, and G. Chiarotti Infrared Surface Absorption in Si(111)2x1 observed with Reflectance Anisotropy Spectroscopy Phys. Rev. B 66 (2002) 153307.
10	N. Motta, F. Rosei, A. Sgarlata, G. Capellini, S. Mobilio and F. Boscherini Evolution of the intermixing process in Ge/Si(111) self-assembled islands Mat. Sci. and Eng. B, Vol. 88 (2002) 264
11	F. Rosei, N. Motta, A. Sgarlata, A. Balzarotti Growth and characterization of Ge nanostructures on Si(111) Lectures Notes in Physics 588, 252 (2002)

2001

1	F. Patella, M. Fanfoni, F. Arciprete, S. Nufris, E. Placidi, and A. Balzarotti Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001) Applied Physics Letters 78 (2001) 320.
2	F. Arciprete, A. Balzarotti, M. Fanfoni, N. Motta, F. Patella, A. Sgarlata Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge on Si(111) Recent Research developments in Vacuum Science & Technology. Publisher: Transworld Research Network (2001).
3	S. Colonna, F. Arciprete, M. Fanfoni, A. Balzarotti, M. De Crescenzi, S. Mobilio, In situ X-ray absorption measurements of the Cu/MgO(001) interface Surface Science Letters 512 (2002) L341-L345.
4	M Tomellini, M Fanfoni "Rate equation approach to film growth Current Opinion in Solid State and Materials Science 5 (2001) 91–96.
5	N. Motta Self-assembled Quantum Dots studied by scanning probes and otherstructural techniques Proc. Workshop on Nanotubes and Nanostructures 2000, S.M.Pula (CA), Ed. S.Bellucci, (Editrice Compositori 2001).
6	M. Fanfoni, M. Tomellini, M. Volpe Coalescence and impingement between islands in thin film growth: Behavior of the island density kinetics Phys. Rev. B, Vol. 64, (2001).
7	M. Fanfoni, M. Tomellini, M. Volpe How the nonrandom distribution of nuclei affects the island density in thin-film growth Appl. Phys. Lett., Vol. 78, 22 (2001).
8	G. Chiarotti, P. Chiaradia, F. Arciprete, C. Goletti Sum rules in surface differential reflectivity and reflectance anisotropy spectroscopies Appl. Surf. Sci. 175-176 (2001) 777-782.
9	C. Goletti, F. Arciprete, S. Almaviva, P. Chiaradia, N. Esser, W. Richter Analysis of InAs(001) surfaces by Reflectance Anisotropy Spectroscopy Physical Review B 64 (2001) 193301.

Characteristics :

Stainless steel UHV system (Standard pressure 6 10-11mbar).
Turbo molecular pump for roughing: 240 l/sec - Ionic pump: 500 l/sec - Titanium sublimator.
X-Y-Z manipulator with resistive heating. Tmax=800 °C.
Knudsen cells: Ga, As, In, Al, Si (as dopant).
Rheed optics E= 10 KeV.

Characteristics :

Stainless steel UHV system (Standard pressure 4x10-11mbar).
Turbo molecular pump for roughing: 240 l/sec - Ionic pump: 200 l/sec - Titanium sublimator.
X-Y-Z manipulator with resistive heating. Tmax=800 °C.
Leed optics.