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2014

1                A. Capasso, E. Placidi, H.F. Zhan, E. Perfetto, J. M. Bell, Y.T. Gu , N. Motta
Graphene ripples generated by grain boundaries in Highly Ordered Pyrolytic Graphite
Carbon 68, 330-336 (2014)
2            R. Magri, E. Placidi, F. Arciprete, and F. Patella
Selective Growth of InAs Quantum Dots on GaAs driven by As kinetics
Crystal Research and Technology 49, 546-551 (2014)
3 C. Goletti, L. Fazi, C. Hogan, L. Persichetti, A. Sgarlata, M. Palummo, and A. Balzarotti
Early oxidation stages of the strained Ge/Si(105) surface: A reflectance anisotropy spectroscopy study
Physica Status Solidi (b) (in press)
4 L. Persichetti, A. Sgarlata, S. Mori, M. Notarianni, V. Cherubini, M. Fanfoni, N. Motta, A. Balzarotti
Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires.
Nanoscale Research Letters 9, 358 (2014)
5 G. Bocchinfuso, P. Conflitti, S. Raniolo, M. Caruso, C. Mazzuca, E. Gatto, E. Placidi, F. Formaggio, C. Toniolo, M. Venanzi, A. Palleschi
Aggregation propensity of Aib-homopeptides of different length. An insight from Molecular Dynamics Simulations
Journal of Peptide Science 20, 494-507 (2014).
6              M. Caruso, E. Gatto, E. Placidi, G. Ballano, F. Formaggio, C. Toniolo, D. Zanuy, C. Alemán and M. Venanzi
A single-residue substitution inhibits fibrillization of Ala-based pentapeptides. A spectroscopic and molecular dynamics investigation
Soft Matter 10, 2508-2519 (2014)
7 I. W. Hamley, S. Kirkham, A. Dehsorkhi, J. Adamcik,V. Castelletto, R. Mezzenga, J. Ruokolainen, C. Mazzuca, E. Gatto, M. Venanzi, E. Placidi, P. Bilalis, H. Iatrou
Self-Assembly of a Model Peptide Incorporating a Hexa-Histidine Sequence Attached to an Oligo-Alanine Sequence, and binding to Gold NTA/Nickel Nanoparticles
Biomacromolecules (in press)

 

2013

1                F. Arciprete, E. Placidi, R. Magri, M. Fanfoni, A. Balzarotti and F. Patella
The Unexpected Role of Arsenic in Driving the Selective Growth of InAs Quantum Dots on GaAs
ACS Nano, 7, 3868-3875 (2013)
2              L.  Persichetti, A. Sgarlata, M. Fanfoni, A. Balzarotti
Size-dependent reversal of the elastic interaction energy between misfit nanostructures
Journal of Physics: Condensed Matter, 25, 075802 (2013).
Cover page vol. 25 Issue 7
3         
A. Sgarlata,
L. Persichetti and A.Balzarotti: K. Wandelt (ed.)
Semiconductor quantum dots: Model case Ge/Si 
Surface and Interface Science Wiley-VCH, (in press).
4          L.  Persichetti, A. Sgarlata, M. Fanfoni, A. Balzarotti
Effects of substrate vicinality on 3D islanding in Ge/Si epitaxy
Thin Solid Films, 543, 88-93 (2013).
5                       L. Persichetti, A. Capasso, A. Sgarlata, A. Quatela, S. Kaciulis, A. Mezzi, M. Notarianni, N. Motta, M. Fanfoni, and A. Balzarotti
Fabrication of SiGe rings and holes on Si(001) by flash annealing
Applied Surface Science, 283, 813-819 (2013).
6                      

F. Arciprete, E. Placidi, R. Magri, D. Del Gaudio and F. Patella
Kinetically Driven Selective Growth of InAs Quantum Dots on GaAs
J. Mater. Res., in press (Invited Feature Paper)

7                    

F. Arciprete, E. Placidi, R. Magri, M. Fanfoni, A. Balzarotti and F. Patella
Role of As in the Anisotropic Positioning of Self-Assembled InAs Quantum Dots
MRS Proceeding Vol 1551, mrss13-1551-r02-05

8                    

M. Caruso, E. Placidi, E. Gatto, C. Mazzuca, L. Stella, G. Bocchinfuso, A. Palleschi, F. Formaggio, C. Toniolo, M. Venanzi
Fibrils or globules? Tuning the morphology of peptide aggregates from helical Building Blocks
Journal of Physical Chemistry B, 117, 5448-5459 (2013)

 

2012

1                
L.  Persichetti, A. Sgarlata, G. Mattoni, M. Fanfoni, A. Balzarotti
Orientational phase diagram of the epitaxially strained Si(001): Evidence of a singular (105) face
Phys. Rev. B, 85 195314 (2012) .
 

2                             
E. Placidi, F. Arciprete, R. Magri, M. Rosini, A. Vinattieri, L. Cavigli,
M. Gurioli, E. Giovine, L.  Persichetti, M. Fanfoni, F. Patella and A. Balzarotti; S. Bellucci (ed.)
InAs epitaxy on GaAs(001): a model case of strain-driven self-assembling of quantum dots
Self-assembly of Nanostrucures, The INFN Lectures-Vol III/,  Berlin Heidelberg: Springer Verlag,
Lecture Notes in Nanoscale Science and Technology, 12 73-125 (2012).

3                               
L. Persichetti, A. Capasso, A. Sgarlata, M. Fanfoni, N. Motta and A. Balzarotti: S. Bellucci (ed.)
Towards a controlled growth of self-assembled nanostructures: shaping, ordering and localization in Ge/Si heteroepitaxy
Self-assembly of Nanostrucures, The INFN Lectures-Vol III/, Berlin Heidelberg: Springer Verlag, Lecture Notes in Nanoscale Science and Technology. 12 201-263 (2012).

4           
M. Fanfoni,
L. Persichetti, M. Tomellini
Order and randomness in Kolmogorov-Johnson-Mehl-Avrami-type phase
Journal of Physics: Condensed Matter, 24, 355002 (2012).

5                               
E. Placidi, F. Arciprete, A. Balzarooti and F. Patella

GaAs an GaMnAs quantum rings grown by droplet epitaxy
Applied Physics Letters,  101, 141901 (2012).

6 F. Valentini, L. Persichetti, A. Sgarlata, M. Fanfoni, G. Palleschi and A. Balzarotti
Morphological and electronic characterization of functionalized graphene-nanoribbons obtained by the unzipping of single-wall carbon nanotubes: a scanning tunneling microscopy study
Fullurenes, nanotubes and carbon nanostructures, 21 302.

7                M. Fanfoni, F. Arciprete, C. Tirabassi, D. Del Gaudio, A. Balzarotti, F. Patella and E. Placidi
Coarsening effect on island-size scaling: The model case InAs/GaAs(001)
Phys. Rev. E, 86 061605 (2012)

8        M. Fanfoni, F. Patella, M. Tomellini, F. Arciprete
I  fenomeni fisici e chimici irreversibili: la diffusione
Lettera matematica PRISTEM, 83 34 (2012)

2011
1             
L. Persichetti, A. Sgarlata, M. Fanfoni and A. Balzarotti

Breaking elastic field symmetry with substrate vicinality
Phys. Rev. Letters, 106 055503 (2011).
Published on Virtual J. of Nanoscale Science and Technology vol. 23, issue 6
 
2               
L. Persichetti, A. Sgarlata, M. Fanfoni and A. Balzarotti

Ge growth on vicinal Si(001) surfaces: island's shape and pair interaction vs miscut angle
Journal of Nanoscience and Nanotechnology, 11 9185 (2011).

 
3               
L. Persichetti, A. Capasso, S. Ruffell, A. Sgarlata, M. Fanfoni, N. Motta and A. Balzarotti

Ordering of Ge islands on Si(001) substrates patterned by nanoindentation.
Thin Solid Films 519, 4207 (2011).

 
4                        
L. Herrera Diez, M. Konuma, J. Honolka, K. Kern, E. Placidi, F. Arciprete, A.W. Rush-forth, R.P. Campion, and B.L. Gallagher
Magnetism and carrier modulation in (Ga,Mn)As/organic-dye hybrid devices
Appl. Phys. Lett. 98, 022503 (2011).

 
5              
E. Placidi, E. Zallo, F. Arciprete, F. Patella, A. Balzarotti
Comparative study of low temperature growth of InAs and InMnAs quantum dots
Nanotechnology 22, 195602 (2011).

 
6                 
L. Herrera Diez, M. Konuma, R. K. Kremer, J. Honolka, K. Kern, E. Placidi and F. Arciprete
Magneto-electronic properties of oxygenated (Ga,Mn)As
Phys. Rev. B 83, 094420 (2011).

 
7              
A. Sgarlata, L. Persichetti, A. Capasso, M. Fanfoni, N. Motta and A. Balzarotti
Driving Ge island ordering on nanostructured Si surfaces
Nanoscience and Nanotechnology Letters 3, 841 (2011).

 
8              
S. Colonna, E. Placidi, F. Ronci, A. Cricenti, F. Arciprete, and A. Balzarotti
The role of kinetics on the Mn-induced reconstructions of the GaAs(001) surface
Journal of  Applied Physics 109, 1123522 (2011).

 
9                       
L. Persichetti, F. Tombolini, S. Casciardi, M. Diociaiuti, M. Fanfoni, G. Palleschi, A. Sgarlata, F. Valentini and A. Balzarotti
Folding and stacking defects of graphene flakes probed by electron nanobeam
Applied Physics Letters 99, 041904 (2011).
Published on Virtual J. of Nanoscale Science and Technology vol. 24, issue 6

 
10            
L.Persichetti, R. Menditto, A.Sgarlata, M.Fanfoni and A.Balzarotti
Hug-like island growth of Ge on strained vicinal Si(111) surfaces
Applied Physics Letters 99, 161907 (2011).
Published on Virtual J. of Nanoscale Science and Technology vol. 24, issue 18

11                 A. Cricenti, S. Colonna, E. Placidi, M. Luce, J. Qi, N. H. Tolk, G. Margaritondo
Optical techniques for pump-probe magnetic measurements and nanoimaging of biological samples
Rend. Fis. Acc. Lincei 22, S49 (2011)
2010
1              L.Persichetti, A.Sgarlata, M.Fanfoni and A.Balzarotti
Shaping Ge islands on Si(001) surfaces with misorientation angle
Phys. Rev. Letters, 104, 036104 (2010).
Published on Virtual J. of Nanoscale Science and Technology vol. 24, issue 6. 
2           L.Persichetti, A.Sgarlata, M.Fanfoni and A.Balzarotti
Pair interaction between Ge islands on vicinal Si(001) surfaces.
Phys. Rev. B, 81, 113409 (2010).

3                 
F. Arciprete, E. Placidi, M. Fanfoni, F. Patella, A. Della Pia and A. Balzarotti

Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001).
Phys. Rev. B, 81, 165306 (2010).
Published on Virtual J. of Nanoscale Science and Technology vol. 21, issue 16.

4                        
L. Herrera Diez, J. Honolka, K. Kern, K. Kronmuller, F. Arciprete, E. Placidi, A.W. Rush-fort, R.P. Campion, and B.L. Gallagher
Magnetic aftereffect in GaMnAs.
Phys. Rev. B, 81, 094412 (2010).

5                L.Persichetti, A.Sgarlata, M.Fanfoni and A.Balzarotti
Ripple-to-dome transition: The growth evolution of Ge on vicinal Si(1 1 10) surface.
Phys. Rev. B, 82, 121309(R) (2010).
Published on Virtual J. of Nanoscale Science and Technology vol. 22, issue 15.

6               J. Honolka, L. Herrera Diez, R.K. Kremer, K. Kern, F. Arciprete, E. Placidi
Temperature dependent Néel wall dynamics in GaMnAs/GaAs.
New J. Phys. 12, 093022 (2010).
7                         I. Hamley, G. Brown, V. Castelletto, G. Cheng, M. Venanzi, M. Caruso, E. Placidi, C. A-leman, G. Revilla-López, D. Zanuy
Self-Assembly of a Designed Amyloid Peptide Contain-ing the Functional Thienylalanine Unit
Journal of Physical Chemistry B 114, 10674-10683 (2010).

2009
1            E. Placidi, A. Dalla Pia, F. Arciprete
Annealing effects on faceting of InAs/GaAs(001) quantum dots
Appl. Phys. Lett. 94, 021901 (2009).
Published onVirtual Journal of Nanoscale Science & Technology Volume 19, Issue 4
2                         S. D. Thorpe, F. Arciprete, E. Placidi, F. Patella, M. Fanfoni, A. Balzarotti, S. Colonna, F. Ronci, A. Cricenti, A. Verdini, L. Floreano, A. Morgante
XPS study of Mn incorporation on the GaAs (001) surface
Superlattices and Microstructures 46, 258, (2009).
3               Bernardi M., Sgarlata A., Fanfoni M., Persichetti L., and Balzarotti A.
Self-assembly of Ge dots on Silicon: an example of controlled nano manufacturing
Superlattices and Microstructures 46, 318 (2009).
4 L.Persichetti, A.Sgarlata, M.Fanfoni, M.Bernardi and A.Balzarotti
Step-step interaction on vicinal Si(001) surfaces studied by scanning tunnelling microscopy
Phys. Rev. B 80, 075315 (2009).
Published on Virtual J. of Nanoscale Science and Technology vol. 20, issue 10. 
5 Arciprete F., Placidi E., Patella F., Fanfoni M., Balzarotti A., Vinattieri A., Cavigli L., Abbarchi M., Gurioli M.,Lunghi  L., and Gerardino A.
 Selective growth of InAs quantum dots on SiO2-masked GaAs
J. of Nanophotonics 3. 031995 (2009).
6
L.Persichetti, A.Sgarlata, M.Fanfoni and A.Balzarotti
Formation and Localization of GeSi Quantum Dots on vicinal surfaces: a Scanning Tunneling Microscopy Characterization

26th European Conference on Surface Science (ECOSS-26) Aug 30- Sept 9 2009, Parma, Italy (Oral)

7

F. Arciprete, F. Patella, E. Placidi, M. Fanfoni, A. Balzarotti, A. Vinatteri and A. Gerardino

Nanoscale Selective Growth of InAs Quantum Dots on GaAs(001): A Bottom-up Approach

MRS fall meeting 2009, 30th November – 3rd December, Boston, USA (Oral).

8

E. Placidi,

Single quantum dot emission by nanoscale selective growth of InAs on GaAs: a bottom-up ap-proach: Collaborative Conference on Interacting Nanostructures (CCIN), 2009 9-13 November, San Diego, USA (Invited Oral)

2008


1 Placidi E., Arciprete F., Fanfoni M, Patella F., Orsini E., and Balzarotti A.
The InAs/GaAs(001) quantum dots transition:  Advances on understanding
In “Self-Assembled Quantum Dots”, Springer New Series: Lecture Notes on Nanoscale Science & Technology", Zhiming M.Wang Ed. vol 1,  p.1-24. (2008)
2

Bute O.,Cimpoca Gh.V., Placidi E., Arciprete F., Patella F., Fanfoni M., Balzarotti A.
The monitoring of 2D-3D transition for InAs/GaAs(001)self-assembled quantum dots by atomic force microscopy
J. of Optoelectronic and Advanced Materials 10, 74-79 (2008).

3                              Bernardi M., Sgarlata A., Fanfoni M.,Balzarotti A., Motta N.
A study of the pair distribution function of self-organized Ge quantum dots
Appl. Phys. Lett. 93, 031917 (2008).
Published on Virtual J. of Nanoscale Science and Technology vol. 18, issue 6. 
4 Adalberto Balzarotti
Evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy
Nanotechnology 19, 505701  (2008).

5 Patella F., Arciprete F., Placidi E., Fanfoni M., Balzarotti A., Vinattieri A., Cavigli L., Abbarchi M., Gurioli M., Lunghi L., Gerardino A.
Single quantum dots emission by nanoscale selective growth of InAs on GaAs: a bottom-up approach
Appl. Phys. Lett. 93, 231904 (2008) .
Published on Virtual Journal of Nanoscale Science & Technology Volume 18, Issue 25
6 Bernardi M., Sgarlata A., Notta, N.,Del Moro D.,Fanfoni M, and Balzarotti A.
Ordering of Ge Quantum Dots on Silicon surfaces via bottom-up and top-down approaches
Proc.Int.Conf. on Nanoscience and Nanotechnology (ICONN 2008), Brisbane, Australia
7 L. Herrera Diez, R.K. Kremer, J. Honolka, K. Kern, A. Enders, M. Rössle, E. Arac, E. Placidi  and F. Arciprete
Complex domain wall dynamics in compressively strained Ga1-x MnxAs epilayers
Phys. Rev. B 78, 155310 (2008).
8

E.  Placidi

The InAs/GaAs(001) quantum dots transition: advances on understanding, Facets of Heteroepi-taxy: 

Theory, Experiment, and Computation, 2008,

10-15 February, Banff, Canada (Invited Oral)

2007









1

E. Placidi, F. Arciprete, F. Patella, M. Fanfoni, E. Orsini and A. Balzarotti,

Kinetic effects in the InAs/GaAs(001) two-dimensional to three-dimensional transition

Journal of Physics: Condensed Matter 19, 225006 (21 pages) (2007)

2

P. D. Szkutnik, A. Sgarlata, E. Placidi, N. Motta, I. Berbezier and A. Balzarotti,

Influence of patterned silicon and silica surfaces on the nucleation of Ge nanostructures

Surf. Sci. 601, 2778-2782 (2007).

3

M. Fanfoni, E. Placidi, F. Arciprete, E. Orsini, F. Patella, A. Balzarotti,

Sudden nucleation versus scale invariance of InAs quantum dots on GaAs

Phys. Rev. B 75, 245312 (2007)

Published on Virtual J. of Nanoscale Science and Technology vol 15, issue 24 (18 June 2007).

4

E. Placidi, F. Arciprete, M. Fanfoni, F. Patella, and A. Balzarotti,

The InAs/GaAs(001) quantum dots transition: advances on understanding

Lecture Notes on Nanoscale Science and Technology: “Self-Assembled Quantum Dots”, page 1-25 (2007)

5

P.D. Szkutnik, A. Sgarlata, A. Balzarotti, N. Motta, A. Ronda, I. Berbezier

Early stage of Ge growth on Si(001) vicinal surfaces with an 8° miscut along [110]

Physical Review B 75 033305

6

Nunzio Motta, Federico Boscherini, Anna Sgarlata, Adalberto Balzarotti, Giovanni Capellini, Fulvio Ratto, and Federico Rosei

GeSi intermixing in Ge nanostructures on Si(111): An XAFS versus STM study

Physical Review B 75 035337

7

Adalberto Balzarotti
 Ge nucleation on patterned and unpatterned Si surfaces in "Highlights on Spectroscopies of Semiconductors and Insulators",
Vol 94, pag.255, Ed. by G.Guizzetti, L.C.Andreani, F. Marabelli, M.Patrini, SIF Bologna (2007). 












 2006

 

1

F.Patella, F.Arciprete, M.Fanfoni, A.Balzarotti and E. Placidi,

Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)

Appl. Phys. Lett. 88, 161903 (2006)

2

E. Placidi, C. Hogan, F. Arciprete, M. Fanfoni, F. Patella, R. Del Sole, and A Balzarotti,

Adsorption of molecular oxygen on GaAs(001) studied using high resolution electron energy loss study

Phys. Rev. B 73, 205345 (2006)

3

F. Arciprete, E. Placidi, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti,

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001).

Appl. Phys. Lett. 89 041904 (2006)

4

O.E. Tereshchenko, D. Paget, P. Chiaradia, E. Placidi, J.E. Bonnet, F. Wiame, and A. Taleb-Ibrahimi,

Chemically prepared well-ordered InP(001) surfaces

Surf. Sci. 600, 3160-3166 (2006)

5

N. Motta, P.D. Szkutnik, M. Tomellini, A. Sgarlata, M. Fanfoni, F. Patella, A. Balzarotti

Role of patterning in islands nucleation on semiconductor surfaces

Comptes Rendus Physique 7 (9-10): 1046-1072 (2006)

6

I. Berbezier, A. Karmous, P.D. Szkutnik, A. Ronda, A. Sgarlata, A. Balzarotti, P. Castrucci, M. Scarselli, M. De Crescenzi

Formation and ordering of Ge nanocrystals on SiO2 using FIB nanolithography

Materials Science in Semiconductor Processing 9, 812-16 (2006)

7

I. Berbezier, A. Karmous, A. Ronda, A. Sgarlata, A. Balzarotti, P. Castrucci, M. Scarselli, M. De Crescenzi

Growth of ultrahigh-density quantum-confined germanium dots on SiO2 thin films

Appl. Phys. Lett. 89, 063122 (2006)

8

M Fanfoni, M Tomellini

Mean field approach for describing thin film morphology.

J. Phys.: Condens. Matter 18 4219-4230

8

M Fanfoni, M Tomellini, B Marchetti and F. Gonnella

Mean field approach for describing thin film morphology: 2. Adatom life time

J. Phys.: Condens. Matter 18 8093-8102

9

E.  Placidi, F. Arciprete, V, Sessi, M. Fanfoni, E. Orsini, F. Patella and A. Balzarotti

Surface Diffusion and Scaling Behavior in the nucleation and growth of InAs Quantum Dots on GaAs(001)

MRS fall meeting 2006, 28th November - 27th November-1st December, Boston, USA (Oral)

 

2005

 

1

C. Hogan, E. Placidi and R. Del Sole

Geometric structure and optical properties of the GaAs(001)-c(4×4) surface,

Phys. Rev. B 71, 041308(R) (2005).

2

I. Aureli, V. Corradini, C. Mariani, E. Placidi, F. Arciprete, A.Balzarotti 

Valence band and In-4d core level study of de-capped and ion-bombarded-annealed In-terminated InAs(001) surfaces, 

Surf. Sci 576, 123 (2005).

3

E. Placidi, F. Arciprete, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti, 

Step erosion during InAs quantum dots on GaAs(001) surface, 

Appl. Phys. Lett. 86, 241913, (2005). Cover page for Issue 24

4

F.Patella, F.Arciprete, M.Fanfoni, V. Sessi, A.Balzarotti and E. Placidi,

Reflection high electron energy diffraction observation of surface mass transport at the two- to three- dimensional growth transition of InAs on GaAs(001),

Appl. Phys. Lett. 87, 252101 (2005).

5

B. Pacchiarotti, M. Fanfoni and M. Tomellini,

Roughness in the Kolmogorov–Johnson–Mehl–Avrami framework: extension to (2+1)D of the Trofimov–Park model 

Physica A, 358 379 (2005) 

6

M. Tomellini, M. Fanfoni

Film growth viewed as stochastic process of dots

Journal of Physics: Condensed Matter 17 (2005) R571

7

M. Tomellini, M. Fanfoni 

Kinetics of island density in thin film growth in the framework of statistical mechanics of rigid disks

Phys. Rev. B 72, 155407 (2005)

8 F. Ratto, F. Rosei, S. Cherifi, A. Locatelli, S. Fontana, S. Heun, P.D. Szkutnik, A. Sgarlata, N. Motta, M. De Crescenzi
Composition of single Ge(Si) islands in the growth of Ge on Si(111) by X–Ray spectromicroscopy
J. Appl. Phys. 97, 043516 (2005).
9

E. Placidi, F. Arciprete, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti,

Dynamic scaling and microscopic mechanisms during growth mode transition of the InAs/GaAs(001) heterostructure,

23rd European Conference on Surface Science (ECOSS-23) 4. - 9. Sept. 2005, Berlin, Germany (Oral)

10

E. Placidi, F. Arciprete, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti,

Dynamic scaling and microscopic mechanisms during growth mode transition of the InAs/GaAs(001) heterostructure,

Villa Mondragone, Università di Roma "Tor Vergata"3 - 5 October 2005, Rome Italy (Invited Oral)

11

F. Arciprete, E. Placidi, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti,

The Two- to Three-Dimensional Transition in InAs/GaAs(001) Heterostructure: The Role of Kinetics

MRS fall meeting 2005, 28th November – 2nd December, Boston, USA (Invited Oral).

12

E. Placidi, F. Arciprete, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti,

Step erosion during nucleation of InAs/GaAs(001) quantum dots,

MRS fall meeting 2005, 28th November – 2nd December, Boston, USA (Oral).

13

A.  Sgarlata, P.D. Szkutnik, A. Balzarotti, N. Motta

Growth and Ordering of Ge quantum dots  on natural and patterned Si  surfaces: a real time study by STM Litography and FIB. A real-time study by Scanning Tunneling Microscopy

Proceeding of IVC-16 (16th International Vacuum Congress ), ICSS-12 (12th International Conference on Solid Surfaces), NANO8 (8thInternational Conference on Nanometer-Scale Science and Technology) AIV-17 (17th Vacuum National Symposium), June 28  July 2, Cinema Festival Palace Venice 2004

14

E.  Placidi, F. Arciprete, V, Sessi, M. Fanfoni, F. Patella and A. Balzarotti

Dynamic scaling and microscopic mechanisms during growth mode transition of the InAs/GaAs(001) heterostructure

Nanocose meeting,Villa Mondragone, Università di Roma "Tor Vergata"3 - 5 October 2005, Rome Italy (Invited Oral)

15

E.  Placidi, F. Arciprete, V, Sessi, M. Fanfoni, F. Patella and A. Balzarotti

Step erosion during nucleation of InAs/GaAs(001) quantum dots

MRS fall meeting 2005, 28th November -- 2nd December, Boston, USA (Oral)

 

 

                                                          2004

 

1

O.E. Tereshchenko, E. Placidi, P. Chiaradia, A. Balzarotti, and D. Paget

Structure of chemically prepared InAs(100) surface

Surf. Sci. 570, 237 (2004).

2

F. Arciprete, C. Goletti, E. Placidi, C. Hogan, P. Chiaradia, M. Fanfoni, F. Patella, and A. Balzarotti

Surface states at the GaAs(001)2 x 4 surface

Phys. Rev. B 69, 081308 (2004)

3

F. Patella, A. Sgarlata, F. Arciprete, S. Nufris, P. Skutznik, E. Placidi, M. Fanfoni, N. Motta and A. Balzarotti

Self-assembly of InAs and Si/Ge quantum dots on structured surface

J. Phys. Cond. Matt 16 S1503-S1534 (2004).(invited review paper)

4

P. D. Szkutnik, A. Sgarlata, S. Nufris, N. Motta, and A. Balzarotti

Real-time scanning tunneling microscopy observation of the evolution of Ge quantum dots on nanopatterned Si(001) surfaces

Phys. Rev. B 69, 201309(R) (2004)

5

M. Scarselli, P. Castrucci, P. D. Szkutnik, A. Sgarlata and M. De Crescenzi

STM study of Si(1 1 1)7 × 7 reconstructed surface carbonization induced by acetylene
Surf. Sci., Vol. 559 (2004) 223

6 C. A. Pignedoli, A. Catellani, P. Castrucci, A. Sgarlata, M. Scarselli, M. De Crescenzi, and C. M. Bertoni
Carbon induced restructuring of the Si(111) surface
Phys. Rev. B 69, 113313 (2004)
7 F. Ratto, F. Rosei, A. Locatelli, S. Cherifi, S. Fontana, S. Heun, P.D. Szkutnik, A. Sgarlata, M. De Crescenzi, and N. Motta
Composition of Ge(Si) islands in the growth of Ge on Si(111)
Appl. Phys. Lett. 84, 4526 (2004)
8 M. Tomellini, M. Fanfoni 
Eliminating overgrowth effects in Kolmogorov-Johnson-Mehl-Avrami model through the correlation among actual nuclei
Physica A: Statistical Mechanics and its Applications, v 333, n 1-4, Feb 15, 2004, p 65-70
9 M. Fanfoni and M. Tomellini
Modeling adatom life time in thin film growth in case of spatially correlated nuclei
Surf. Sci., Vol. 566-568 (2004), 1147
10

A. Balzarotti, M. Cini, E. Perfetto, G. Stefanucci

W=0 pairing  in Hubbard and related  models of  low-dimensional  superconductors

J. Phys .:Condens. Matter 16, R1387-R1422 (2004), (invited review paper)
11

H. Guyot, N. Motta, E. Placidi and H. Balaska

Characterization of cleaved surfaces of a monophosphate tungsten bronze

Rev. Adv. Mater. Sci. 8 (2004) 1-10

 

 

                                                               2003

 

1

F.Arciprete, C. Goletti, E. Placidi, M.Fanfoni, F.Patella, P. Chiaradia, C. Hogan and A. Balzarotti 

Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4 x 4) surface 

Physical Review B, 68 125328 (2003).

2

F. Patella, S. Nufris, F. Arciprete, M. Fanfoni, E. Placidi, A.  Sgarlata, and A. Balzarotti 

Tracing the two-to-three dimensional transition in the InAs/GaAs(001) heteroepitaxial growth

Physical Review B, 67 205308 (2003).

3

A. Balzarotti, E. Placidi, F. Arciprete, M. Fanfoni, F. Patella

Anisotropy of the GaAs(001)-β2(2×4) surface from high-resolution electron-energy-loss spectroscopy

Physical Review B, 67 115332 (2003).

4

F. Patella, S. Nufris, F.Arciprete, M. Fanfoni, E. Placidi, A. Sgarlata, and A. Balzarotti

Structural Study of the InAs Quantum-Dot Nucleation on GaAs(001)

Microelectronics Journal 34, 419 (2003)

5

A. Balzarotti, M. Fanfoni, F. Patella, F. Arciprete, E. Placidi, G. Onida, R. Del Sole

The GaAs(001) c(4×4) surface: A New Perspective from Energy Loss Spectra 

Surf. Sci. Lett. 524, L71 (2003).

6

A. Balzarotti, M. Fanfoni,F. Patella, F. Arciprete, and E. Placidi

Electronic anisotropy of the GaAs(001) surface studied by the energy loss spectroscopy

Microelectronics Journal 34, 595 (2003)

7

F. d’Acapito, S. Colonna, F. Arciprete, A. Balzarotti, I. Davoli, F. Patella, S. Mobilio

InxGa(1-x)As quantum dots grown on GaAs studied by EXAFS in total reflection mode (ReflEXAFS)

Nuclear Instruments and Methods in Physics Research B 200 (2003) 85.
8 A. Sgarlata, P. D. Szkutnik, A. Balzarotti, N. Motta, and F. Rosei
Self-ordering of Ge islands on step-bunched Si(111) surfaces
Appl. Phys. Lett. 83, 4002 (2003)
9

P. D. Szkutnik, A. Sgarlata, N. Motta and A. Balzarotti

Real-time studies of Ge growth on nanostructured Si substrates 

Mat. Sci. and Eng. C, Vol. 23, (2003) 1053

10

N. Motta, A. Sgarlata, F. Rosei, P. D. Szkutnik, S. Nufris, M. Scarselli and A. Balzarotti

Controlling the quantum dot nucleation site

Mat. Sci. and Eng. B, Vol. 101 (2003) 77

11 M. Scarselli, L. Dragone, A. Sgarlata, M. Fanfoni, V. Di Castro and R. Zanoni
Mn/Pt(1 1 1) interface investigated at the first stages of formation via AES and STM 
Surf. Sci., Vol. 545 (2003) L774
12 P. Castrucci, A. Sgarlata, M. Scarselli and M. De Crescenzi
STM study of acetylene reaction with Si(1 1 1): observation of a carbon-induced Si(1 1 1)square root = radical sign3×square root = radical sign3R30° reconstruction
Surf. Sci., Vol. 531 (2003) L329
13 M.Fanfoni, M.Tomellini
Beyond the Kolmogorov Johnson Mehl Avrami kinetics:inclusion of the spatial correlation
Eur. Phy. J. B 34 (2003) 331

 

 

2002

 

1

F. Arciprete, F. Patella, M. Fanfoni, S. Nufris, E. Placidi, D. Schiumarini, and A. Balzarotti

Morphology of Self-Assembled InAs Quantum Dots on GaAs(001)"

Mat. Res. Soc. Symp. Proc. Vol. 696 (2002).

2

F. Patella, F. Arciprete, E. Placidi, S. Nufris, M. Fanfoni, A.Sgarlata, D. Schiumarini, and A. Balzarotti

Morphological instabilities of the GaAs(001) surface and their effect on the self-assembling of InAs quantum-dot  arrays

Appl. Phys Lett. 81 2273 (2002).

3

S. Colonna, F. Arciprete, M. Fanfoni, A. Balzarotti, M. De Crescenzi, S. Mobilio

In situ X-ray  absorption measurements of the Cu/MgO(001) interface

Surf. Sci., Vol. 512, (2002) L341

4

N. Motta, A. Sgarlata, A. Balzarotti, F. Rosei 

Self assembling and ordering of Ge/Si quantum dots on flat and nanostructured  surfaces

Mat. Res. Soc. Symp. Boston , Vol.696, N2.2.1, (2002).

5

M Tomellini, M Fanfoni, M. Volpe

Phase transition kinetics in the case of nonrandom nucleation 

Phys. Rev. B, Vol. 65 (2002), 140301(R). 

6

M Fanfoni, M Tomellini, M. Volpe

Treatment of phantom overgrowth in the Kolmogorov-Johnson-Mehl-Avrami kinetics as a correlation problem

Phys. Rev. B, Vol. 65 (2002).

7

N. Motta, A. Sgarlata, A. Balzarotti and F. Rosei

Self assembling and ordering of Ge/Si quantum dots on Flat and Nanostructured Surfaces

Mat. Res. Soc. Symp. Vol 696 (2002).

8

F. Arciprete, C. Goletti, S. Almaviva, and P. Chiaradia

Optical anisotropy of oxidized InAs(001) surfaces

Surface Science 515 (2002) 281-286.
9

C. Goletti, G. Bussetti, F. Arciprete, P. Chiaradia, and G. Chiarotti

Infrared Surface Absorption in Si(111)2x1 observed with Reflectance Anisotropy Spectroscopy

Phys. Rev. B 66 (2002) 153307.

10 N. Motta, F. Rosei, A. Sgarlata, G. Capellini, S. Mobilio and F. Boscherini
Evolution of the intermixing process in Ge/Si(111) self-assembled islands
Mat. Sci. and Eng. B, Vol. 88 (2002) 264
11

F. Rosei, N. Motta, A. Sgarlata, A. Balzarotti

Growth  and  characterization  of  Ge  nanostructures  on Si(111)

Lectures Notes in Physics 588, 252 (2002)

 

 

2001

 

1

F. Patella, M. Fanfoni, F. Arciprete, S. Nufris, E. Placidi, and A. Balzarotti

Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001)

Applied Physics Letters 78 (2001) 320.

2

F. Arciprete, A. Balzarotti, M. Fanfoni, N. Motta, F. Patella, A. Sgarlata

Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge on Si(111)

Recent Research developments in Vacuum Science & Technology. Publisher: Transworld Research Network (2001).

3

S. Colonna, F. Arciprete, M. Fanfoni, A. Balzarotti, M. De Crescenzi, S. Mobilio,

In situ X-ray  absorption measurements of the Cu/MgO(001) interface

Surface Science Letters 512 (2002) L341-L345.

4

M Tomellini, M Fanfoni

"Rate equation approach to film growth

Current Opinion in Solid State and Materials Science 5 (2001) 91–96.

5

N. Motta

Self-assembled Quantum Dots studied by scanning probes and otherstructural techniques

Proc. Workshop on Nanotubes and Nanostructures 2000, S.M.Pula (CA), Ed. S.Bellucci, (Editrice Compositori 2001).

6

M. Fanfoni, M. Tomellini, M. Volpe

Coalescence and impingement between islands in thin film growth: Behavior of the island density kinetics

Phys. Rev. B, Vol. 64, (2001).

7

M. Fanfoni, M. Tomellini, M. Volpe

How the nonrandom distribution of nuclei affects the island density in thin-film growth

Appl. Phys. Lett., Vol. 78, 22 (2001).

8

G. Chiarotti, P. Chiaradia, F. Arciprete, C. Goletti

Sum rules in surface differential reflectivity and reflectance anisotropy spectroscopies

Appl. Surf. Sci. 175-176 (2001) 777-782.
9

C. Goletti, F. Arciprete, S. Almaviva, P. Chiaradia, N. Esser, W. Richter

Analysis of InAs(001) surfaces by Reflectance Anisotropy Spectroscopy

Physical Review B 64 (2001) 193301.

Characteristics :
  • Stainless steel UHV system (Standard pressure 6 10-11mbar).
  • Turbo molecular pump for roughing: 240 l/sec - Ionic pump: 500 l/sec - Titanium sublimator.
  • X-Y-Z manipulator with resistive heating. Tmax=800 °C.
  • Knudsen cells: Ga, As, In, Al, Si (as dopant).
  • Rheed optics E= 10 KeV.
 Characteristics :
  • Stainless steel UHV system (Standard pressure 4x10-11mbar).
  • Turbo molecular pump for roughing: 240 l/sec - Ionic pump: 200 l/sec - Titanium sublimator.
  • X-Y-Z manipulator with resistive heating. Tmax=800 °C.
  • Leed optics.
  Università di Roma Tor Vergata